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IS42VM32200G Datasheet, PDF (13/27 Pages) Integrated Silicon Solution, Inc – 512K x 32Bits x 4Banks Low Power Synchronous DRAM
IS42VM32200G
Table5: Function Truth Table
Current
State
Write
Read
with
Auto
Precharge
Write
with
Auto
Precharge
Command
/CS /RAS /CAS /WE BA
A0-A10
Description
Action
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
L
L
H
L
BA
X
Precharge
Termination Burst :
Start the Precharge
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
L
H
L
L
BA Col Add./A10 Write/WriteAP
Termination Burst :
Start Write(AP)
L
H
L
H
BA Col Add./A10 Read/ReadAP
Terimination Burst :
Start READ(AP)
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
L
L
H
L
BA
X
Precharge
ILLEGAL
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
L
H
L
L
BA Col Add./A10 Write/WriteAP
ILLEGAL
L
H
L
H
BA Col Add./A10 Read/ReadAP
ILLEGAL
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
L
L
H
L
BA
X
Precharge
ILLEGAL
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
L
H
L
L
BA Col Add./A10 Write/WriteAP
ILLEGAL
L
H
L
H
BA Col Add./A10 Read/ReadAP
ILLEGAL
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
Note
13,14
13
10
4
8
8,9
13,14
13
4,12
4,12
12
12
13,14
13
4,12
4,12
12
12
Rev. A | July 2010
www.issi.com - DRAM@issi.com
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