IS61LPS12832A Datasheet, PDF (1/26 Pages) Integrated Silicon Solution, Inc – 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
ISSI^®
128K x 32, 128K x 36, 256K x 18
4 Mb SYNCHRONOUS PIPELINED,
PRELIMINARY INFORMATION
FEBRUARY 2005
SINGLE CYCLE DESELECT STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth
expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VPS: VDD 2.5V + 5%, VDDQ 2.5V + 5%
• JEDEC 100-Pin TQFP, 119-ball PBGA, and
165-ball PBGA packages
• Automotive temperature available
• Lead Free available
DESCRIPTION
The ISSIIS61(64)LPS12832A,IS61(64)LPS/VPS12836A
and IS61(64)LPS/VPS25618A are high-speed, low-power
synchronous static RAMs designed to provide burstable,
high-performance memory for communication and network-
ing applications. The IS61(64)LPS12832A is organized as
131,072 words by 32 bits. The IS61(64)LPS/VPS12836A
is organized as 131,072 words by 36 bits. The IS61(64)LPS/
VPS25618A is organized as 262,144 words by 18 bits.
Fabricated with ISSI's advanced CMOS technology, the
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single mono-
lithic circuit. All synchronous inputs pass through regis-
ters controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
250
200
Units
2.6
3.1
ns
4
5
ns
250
200
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. 00A
10/07/04