IS45S32400B Datasheet, PDF (1/60 Pages) Integrated Silicon Solution, Inc – 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

IS45S32400B
4Meg x 32
128-MBIT SYNCHRONOUS DRAM
ISSI^®
JULY 2006
FEATURES
• Clock frequency: 166, 143, 125, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS45S32400B
VDD VDDQ
3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Automotive Temperature Range
Option A: 0^oC to +70^oC
Option A1: -40^oC to +85^oC
• Available in 86-pin TSOP-II and 90-ball FBGA
• Available in Lead-free
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4
Banks.
KEY TIMING PARAMETERS
Parameter
-6 -7
Unit
Clk Cycle Time
CAS Latency = 3
67
ns
CAS Latency = 2
8 10
ns
Clk Frequency
CAS Latency = 3
166 143
Mhz
CAS Latency = 2
125 100
Mhz
Access Time from Clock
CAS Latency = 3
5.4 5.4
ns
CAS Latency = 2
6.5 6.5
ns
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
07/10/06