IS43R83200F Datasheet, PDF (1/32 Pages) Integrated Silicon Solution, Inc – Auto Precharge

IS43R83200F
IS43/46R16160F, IS43/46R32800F
8Mx32, 16Mx16, 32Mx8 PRELIMINARY INFORMATION
256Mb DDR SDRAM
MARCH 2014
FEATURES
DEVICE OVERVIEW
• VDD and VDDQ: 2.5V ± 0.2V
• SSTL_2 compatible I/O
• Double-data rate architecture; two data transfers
per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
• DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
• Differential clock inputs (CK and CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
• Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
• Burst Length: 2, 4 and 8
• Burst Type: Sequential and Interleave mode
• Programmable CAS latency: 2, 2.5 and 3
• Auto Refresh and Self Refresh Modes
• Auto Precharge
• TRAS Lockout supported (tRAP = tRCD)
OPTIONS
• Configuration(s): 8Mx32, 16Mx16, 32Mx8
• Package(s):
144 Ball BGA (x32)
66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
ISSI’s 256-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 268,435,456-bit memory
array is internally organized as four banks of 64Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 8-bit, 16-bit and 32-bit data word size
Input data is registered on the I/O pins on both edges
of Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter 8M x 32
16M x 16
32M x 8
Configuration 2M x 32 x 4
banks
4M x 16 x 4
banks
8M x 8 x 4
banks
Bank Address BA0, BA1
Pins
BA0, BA1
BA0, BA1
Autoprecharge A8/AP
Pins
A10/AP
A10/AP
Row Address 4K(A0 – A11) 8K(A0 – A12) 8K(A0 – A12)
Column
Address
512(A0 – A7, 512(A0 – A8) 1K(A0 – A9)
A9)
Refresh Count
Com./Ind./A1 4K / 64ms
A2
4K / 16ms
8K / 64ms
8K / 16ms
8K / 64ms
KEY TIMING PARAMETERS
Speed Grade
-5
-6 Units

Fck Max CL = 3
200
167
MHz
Fck Max CL = 2.5 167
167
MHz
Fck Max CL = 2
133
133
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
1
Rev. 0A
03/24/2014