IS43R16320E Datasheet, PDF (1/33 Pages) Integrated Silicon Solution, Inc – Auto Refresh and Self Refresh Modes

IS43R86400E
IS43/46R16320E, IS43/46R32160E
16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION
512Mb DDR SDRAM
NOVEMBER 2013
FEATURES
• VDD and VDDQ: 2.5V ± 0.2V (-5, -6)
• VDD and VDDQ: 2.5V ± 0.1V (-4)
• SSTL_2 compatible I/O
• Double-data rate architecture; two data transfers
per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
• DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
• Differential clock inputs (CK and CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge;
data and data mask referenced to both edges of
DQS
• Four internal banks for concurrent operation
• Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
• Burst Length: 2, 4 and 8
• Burst Type: Sequential and Interleave mode
• Programmable CAS latency: 2, 2.5 and 3
• Auto Refresh and Self Refresh Modes
• Auto Precharge
OPTIONS
• Die revision: D
• Configuration(s):
16Mx32
32Mx16
64Mx8
• Package(s):
144 Ball BGA (x32)
66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
DEVICE OVERVIEW
ISSI’s 512-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 536,870,912-bit memory
array is internally organized as four banks of 128Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 8-bit, 16-bit and 32-bit data word size
Input data is registered on the I/O pins on both edges
of Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter 16M x 32
32M x 16
64M x 8
Configuration 4M x 32 x 4
banks
8M x 16 x 4
banks
16M x 8 x 4
banks
Bank Address BA0, BA1
Pins
BA0, BA1
BA0, BA1
Autoprecharge A8/AP
Pins
A10/AP
A10/AP
Row Address 8K(A0 – A12) 8K(A0 – A12) 8K(A0 – A12)
Column
Address
512(A0 – A7, 1K(A0 – A9) 2K(A0 – A9,
A9)
A11)
Refresh Count
Com./Ind./A1 8K / 64ms
A2
8K / 16ms
8K / 64ms
8K / 16ms
8K / 64ms
8K / 16ms
KEY TIMING PARAMETERS
Speed Grade
-4 -5
-6 Units
x8, x16
only
Fck Max CL = 3 250 200 167
MHz
Fck Max CL = 2.5 167 167 167
MHz
Fck Max CL = 2 133 133 133
MHz
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
1
Rev. 00A
10/24/13