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IS43DR81280A Datasheet, PDF (1/28 Pages) Integrated Silicon Solution, Inc – 1Gb (x8, x16) DDR2 SDRAM | |||
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IS43/46DR81280A, IS43/46DR16640A
1Gb (x8, x16) DDR2 SDRAM
SEPTEMBER 2011
FEATURES
ï· Clock frequency up to 400MHz
ï· 8 internal banks for concurrent operation
ï· 4âbit prefetch architecture
ï· Programmable CAS Latency: 3, 4, 5, 6 and 7
ï· Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
ï· Write Latency = Read Latencyâ1
ï· Programmable Burst Sequence: Sequential or
Interleave
ï· Programmable Burst Length: 4 and 8
ï· Automatic and Controlled Precharge Command
ï· Power Down Mode
ï· Auto Refresh and Self Refresh
ï· Refresh Interval: 7.8 ïs (8192 cycles/64 ms)
ï· OCD (OffâChip Driver Impedance Adjustment)
ï· ODT (OnâDie Termination)
ï· Weak Strength DataâOutput Driver Option
ï· Bidirectional differential Data Strobe (Singleâ
ended dataâstrobe is an optional feature)
ï· OnâChip DLL aligns DQ and DQs transitions with
CK transitions
ï· DQS# can be disabled for singleâended data
strobe
ï· Read Data Strobe supported (x8 only)
ï· Differential clock inputs CK and CK#
ï· VDD and VDDQ = 1.8V ± 0.1V
ï· PASR (Partial Array Self Refresh)
ï· SSTL_18 interface
ï· tRAS lockout supported
ï· Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = â40°C to 85°C; TC = â40°C to 95°C)
Automotive, A1 (TA = â40°C to 85°C; TC = â40°C to 95°C)
Automotive, A2 (TA = â40°C to 105°C; TC = â40°C to
105°C)
OPTIONS
ï· Configuration:
ï 128Mx8 (16M x 8 x 8 banks)
ï 64Mx16 (8M x 16 x 8 banks)
ï· Package:
ï 60âball TWâBGA for x8
ï 84âball TWâBGA for x16
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
128Mx8
A0âA13
A0âA9
BA0âBA2
A10
64Mx16
A0âA12
A0âA9
BA0âBA2
A10
Clock Cycle Timing
â37C
â3D
â25E
â25D
Units
Speed Grade
DDR2â533C
DDR2â667D
CLâtRCDâtRP
4â4â4
5â5â5
tCK (CL=3)
5
5
tCK (CL=4)
3.75
3.75
tCK (CL=5)
3.75
3
tCK (CL=6)
3.75
3
tCK (CL=7)
3.75
3
Frequency (max)
266
333
Note: The â37C device specification is shown for reference only.
DDR2â800E
6â6â6
5
3.75
3
2.5
2.5
400
DDR2â800D
5â5â5
tCK
5
ns
3.75
ns
2.5
ns
2.5
ns
2.5
ns
400
MHz
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. â www.issi.com â
1
Rev. D, 08/30/2011
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