IS42S32800B Datasheet, PDF (1/62 Pages) Integrated Silicon Solution, Inc – 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32800B
ISSI^®
2M Words x 32 Bits x 4 Banks (256-MBIT)
SYNCHRONOUS DYNAMIC RAM
July 2006
FEATURES
· Concurrent auto precharge
· Clock rate:166/143 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (2M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
-Burst-Read-Single-Write
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms (15.6µs/row)
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 86 Pin TSOP-2,0.50mm Pin Pitch
8x13mm, 90 Ball BGA, Ball pitch 0.8mm
· Pb-free package is available.
DESCRIPTION
The ISSI IS42S32800B is a high-speed CMOS
configured as a quad 2M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
Each of the 2M x 32 bit banks is organized as 4096 rows
by 512 columns by 32 bits.Read and write accesses start
at a selected locations in a programmed sequence.
Accesses begin with the registration of a BankActive
command which is then followed by a Read or Write
command
The ISSI IS42S32800B provides for programmable
Read or Write burst lengths of 1,2,4,8,or full page, with
a burst termination operation. An auto precharge
function may be enable to provide a self-timed row
precharge that is initiated at the end of the burst
sequence.The refresh functions, either Auto or
Self Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
05/24/06