IS42S32160A Datasheet, PDF (1/60 Pages) Integrated Silicon Solution, Inc – 4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32160A
4M Words x 32 Bits x 4 Banks (512-MBIT)
SYNCHRONOUS DYNAMIC RAM
PRELIMINARY INFORMATION
JULY 2009
FEATURES
· Concurrent auto precharge
· Clock rate: 133 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (4M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 8K refresh cycles/64ms
· 8K refresh cycles/32ms for Industrial grade
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 8x13mm, 90 Ball LF-BGA, Ball pitch 0.8mm,
Ball size 0.45mm
· Pb-free package is available.
· Available in Industrial Temperature
DESCRIPTION
The ISSI IS42S32160A is a high-speed CMOS
configured as a quad 4M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
It is internally configured by stacking two 256Mb,
16 Meg x 16 devices. Each of the 4M x 32 bit banks is
organized as 8192 rows by 512 columns by 32 bits.
Read and write accesses start at a selected locations
in a programmed sequence. Accesses begin with
the registration of a BankActive command which is
then followed by a Read or Write command.
The ISSI IS42S32160A provides for programmable
Read or Write burst lengths of 1,2,4,8,or full page, with
a burst termination operation. An auto precharge
function may be enable to provide a self-timed row
precharge that is initiated at the end of the burst
sequence.The refresh functions, either Auto or
Self Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
Integrated Silicon Solution, Inc.
1
Rev. 00E
07/21/09