IS41LV16400 Datasheet, PDF (1/19 Pages) Integrated Silicon Solution, Inc – 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16400
4M x 16 (64-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI^®
NOVEMBER 1999
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 4,096 cycles / 64 ms
• Auto refresh Mode: RAS-Only, CAS-before-RAS
(CBR), and Hidden
• Low Standby power dissipation:
– 1.8mW(max) CMOS Input Level
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30^oC to 85^oC
• Industrail Temperature Range -40^oC to 85^oC
DESCRIPTION
The ISSI IS41LV16400 is 4,194,304 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called
EDO Page Mode. EDO Page Mode allows 1,024 random
accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of
upper and lower byte, makes the IS41LV16400 ideal for
use in 16-bit wide data bus systems.
These features make the S41LV16400 ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IS41LV16400 is packaged in a 50-pin TSOP (Type II).
JEDEC standard pinout.
PIN CONFIGURATION
50-Pin TSOP (Type II)
VCC
1
I/O0
2
I/O1
3
I/O2
4
I/O3
5
VCC
6
I/O4
7
I/O5
8
I/O6
9
I/O7
10
NC
11
VCC
12
W
13
RAS
14
NC
15
NC
16
NC
17
NC
18
A0
19
A1
20
A2
21
A3
22
A4
23
A5
24
VCC
25
50
GND
49
I/O15
48
I/O14
47
I/O13
46
I/O12
45
GND
44
I/O11
43
I/O10
42
I/O9
41
I/O8
40
NC
39
GND
38
LCAS
37
UCAS
36
OE
35
NC
34
NC
33
NC
32
A11
31
A10
30
A9
29
A8
28
A7
27
A6
26
GND
PIN DESCRIPTIONS
A0-A11
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
KEY TIMING PARAMETERS
Parameter
-50 -60 Unit
Max. RAS Access Time (tRAC)
50 60 ns
Max. CAS Access Time (tCAC)
13 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. EDO Page Mode Cycle Time (tPC) 20 25 ns
Min. Read/Write Cycle Time (tRC)
84 104 ns
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
11/18/99