IS41LV16257B Datasheet, PDF (1/20 Pages) Integrated Silicon Solution, Inc – 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IS41LV16257B
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI^®
APRIL 2005
FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via
two CAS
• Lead-free available
DESCRIPTION
The ISSI IS41LV16257B is 262,144 x 16-bit high-
performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random
accesses within a single row with access cycle time as
short as 12 ns per 16-bit word. The Byte Write control,
of upper and lower byte, makes these devices ideal for
use in 16- and 32-bit wide data bus systems.
These features make the IS41LV16257B ideally suited
for high band-width graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IS41LV16257B is packaged in a 40-pin, 400-mil
SOJ and TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-35
-60
Unit
35
60
ns
11
15
ns
18
30
ns
14
25
ns
60
110
ns
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
04/22/05