IS41C8200 Datasheet, PDF (1/18 Pages) Integrated Silicon Solution, Inc – 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C8200
IS41LV8200
2M x 8 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI^®
JUNE 2001
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
• Single power supply:
5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40°C to 85°C
PRODUCT SERIES OVERVIEW
Part No.
IS41C8200
IS41LV8200
Refresh
2K
2K
Voltage
5V ± 10%
3.3V ± 10%
PIN CONFIGURATION
28 Pin SOJ
DESCRIPTION
TheISSI IS41C8200andIS41LV8200are2,097,152x8-bithigh-
performance CMOS Dynamic Random Access Memory.
These devices offer an accelarated cycle access called
EDO Page Mode. EDO Page Mode allows 2,048 random
accesses within a single row with access cycle time as
short as 20 ns per 4-bit word.
These features make the IS41C8200 and IS41LV8200
ideally suited for high-bandwidth graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C8200 and IS41LV8200 are packaged in 28-pin
300-mil SOJ with JEDEC standard pinouts.
KEY TIMING PARAMETERS
Parameter
-50 -60 Unit
RAS Access Time (tRAC)
CAS Access Time (tCAC)
50 60 ns
13 15 ns
Column Address Access Time (tAA) 25 30 ns
EDO Page Mode Cycle Time (tPC) 20 25 ns
Read/Write Cycle Time (tRC)
84 104 ns
VCC 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 GND
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 GND
PIN DESCRIPTIONS
A0-A10
I/O0-7
WE
OE
RAS
CAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
06/22/01