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IS41C4100 Datasheet, PDF (1/19 Pages) Integrated Silicon Solution, Inc – 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100
IS41LV4100
1Meg x 4 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
PRELIMINARY INFORMATION
SEPTEMBER 2001
FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 1024 cycles/16 ms
• Refresh Mode : RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C4100)
3.3V ± 10% (IS41LV4100)
• Industrail Temperature Range -40oC to 85oC
DESCRIPTION
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit
high-performance CMOS Dynamic Random Access
Memory. Both products offer accelerated cycle access
EDO Page Mode. EDO Page Mode allows 512 random
accesses within a single row with access cycle time as
short as 10ns per 4-bit word.
These features make the IS41C4100 and IS41LV4100 ideally
suited for high band-width graphics, digital signal processing,
high-performance computing systems, and peripheral applications.
The IS41C4100 and IS41LV4100 are available in a 20-pin,
300-mil SOJ package.
KEY TIMING PARAMETERS
Parameter
-35
Max. RAS Access Time (tRAC)
35
Max. CAS Access Time (tCAC)
10
Max. Column Address Access Time (tAA) 18
Min. Fast Page Mode Cycle Time (tPC) 12
Min. Read/Write Cycle Time (tRC)
60
-60 Unit
60 ns
15 ns
30 ns
25 ns
110 ns
PIN DESCRIPTIONS
A0-A9
I/O0-I/O3
WE
OE
RAS
CAS
VCC
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
PIN CONFIGURATION
20-Pin SOJ
I/O0 1
I/O1 2
WE 3
RAS 4
A9 5
A0 6
A1 7
A2 8
A3 9
Vcc 10
20 GND
19 I/O3
18 I/O2
17 CAS
16 OE
15 A8
14 A7
13 A6
12 A5
11 A4
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
PRELIMINARY INFORMATION Rev. 00A
09/10/01