IS32WV204816B Datasheet, PDF (1/18 Pages) Integrated Silicon Solution, Inc – 2M x 16 (32-Mbit) PSEUDO STATIC RAM

IS32WV204816B
ISSI^®
2M x 16 (32-Mbit) PSEUDO STATIC RAM
MAY 2004
FEATURES
• Access time: 70ns
• TTL compatible inputs and outputs; tri-state I/O
• Wide Power supply voltage: 2.2V to 3.6V
• CMOS Standby: 70µA (32-Mbit)
• Deep Power Down Standby: 5µA (32-Mbit)
• Deep Power-Down Mode: Data Invalid
• Page Operation Mode: Four Word Access
• Logic compatible with SRAM R/W (WE) pin.
• Industrial Temperature Range: -40^oC to 85^oC
DESCRIPTION
The ISSI IS32WV204816B is a high-performance CMOS
Pseudo Static RAM, organized as 2Meg x 16 bits.
ISSI CMOS technology provides high density, high speed
low power devices that features SRAM-like write timing.
Data is written to memory cells on the rising edge of the WE
signal. With a page size of 4 words, the device has a page
access operation. The device also supports deep power-
down mode providing low-power standby.
The IS32WV204816B is packaged in a 48-pin mini-BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A1
A2-A20
VDD
GND
I/O0-I/O15
DECODER
I/O
DATA
CIRCUIT
2Mb x 16
MEMORY ARRAY
COLUMN I/O
UB
LB
CS1
CS2
WE
OE
CONTROL
CIRCUIT
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
04/29/04