IS29LV032T Datasheet, PDF (1/47 Pages) Integrated Silicon Solution, Inc – Single power supply operation

IS29LV032T/B
IS29LV032T/B
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access time 70 ns
- 90 ns devices (Call Factory)
• Low power consumption (typical values at
5 MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA current in standby or automatic
sleep mode
• Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors
- 8-Kbyte sectors for Top or Bottom boot
- Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors
• Secured Silicon Sector
- Provides a 128-words area for code or data
that can be permanently protected.
- Once this sector is protected, it is prohibited
to program or erase within the sector again.
• High performance program/erase speed
- Word program time: 15µs typical
- Sector erase time: 100ms typical
- Chip erase time: 8s typical
• JEDEC Standard compatible
• Standard DATA# polling and toggle bits
feature
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
• Low Vcc write inhibit < 2.5V
• Minimum 100K program/erase endurance
cycles
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode
• WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA (Call Factory)
• Industrial Temperature Range (-40 to 85 C)
• Automotive Grades Range (Call Factory)
GENERAL DESCRIPTION
The IS29LV032T/B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 4,194,304 bytes or 2.097,152 words available in top or bottom boot configurations.
Any word can be programmed typically in 15µs. The IS29LV032T/B features 3.0V voltage read and
write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-
performance microprocessor systems.
The IS29LV032T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
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Integrated Silicon Solution, Inc.- www.issi.com
1
Rev. D
07/16/2014