TLP321 Datasheet, PDF (2/3 Pages) ISOCOM COMPONENTS – HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV_ECO
Power Dissipation
80V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T_A = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
Reverse Voltage (V_R)
Reverse Current (I_R)
1.0 1.15 1.3 V
5
V
10 µA
Output
Collector-emitter Breakdown (BV_CEO) 80
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (I_CEO)
V
V
100 nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
TLP321, TLP321-2, TLP321-4
50
CTR selection available GB
100
BL
200
GB
30
Collector-emitter Saturation VoltageV_{CE (SAT)}
GB
Input to Output Isolation Voltage V_ISO 5300
7500
600 %
600 %
600 %
%
0.4 V
0.4 V
V_RMS
V_PK
Input-output Isolation Resistance R_ISO 5x10¹⁰
Ω
Rise Time
tr
2
µs
Fall Time
tf
3
µs
Turn-on Time
ton
3
µs
Turn-off Time
toff
3
µs
I = 10mA
F
I_R = 10µA
V_R = 5V
I_C = 0.5mA
I
E
=
100µA
V_CE = 48V
5mA I_F , 5V V_CE
1mA I_F , 0.4V V_CE
8mA I_F , 2.4mA I_C
1mA I , 0.2mA I
F
C
See note 1
V_IO = 500V (note 1)
V_CC = 10V ,
I
C
=
2mA,
R
L
=
100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92545m-AAS/A1