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TIL194 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V )
F
1.2 1.4 V
I = ± 20mA
F
Output
Collector-emitter Breakdown (BVCEO) 35
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled
Current Transfer Ratio (CTR) (Note 2)
TIL194, TIL195, TIL196
20
TIL194A, TIL195A, TIL196A
50
TIL194B, TIL195B, TIL196B
100
Collector-Emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Response Time (Rise), tr
4
Response Time (Fall), tf
3
V
V
100 nA
%
%
%
0.4 V
VRMS
VPK
Ω
µs
µs
IC = 0.5mA
I
E
=
100µA
VCE = 20V
± 5mAIF , 5V VCE
± 5mAIF , 1mAIC
See note 1
See note 1
VIO = 500V (note 1)
V = 2V ,
CE
IC= 2mA, RL= 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
14/5/03
DB92398m-AAS/A6