 English |
|
|
|
|
|
|
|
| TIP35 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,40-100V,125W) | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP35
V(SUS)CEO
Collector-emitter
sustaining voltage
TIP35A
TIP35B
IC=30mA ;IB=0
TIP35C
VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A
VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=5A
VBE-1
Base-emitter on voltage
IC=15A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=25A ; VCE=4V
ICEO
Collector
cut-off current
ICES
Collector
cut-off current
TIP35/35A VCE=30V; IB=0
TIP35B/35C VCE=60V; IB=0
TIP35
VCE=40V;VEB=0
TIP35A
VCE=60V;VEB=0
TIP35B
VCE=80V;VEB=0
TIP35C
VCE=100V;VEB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=1.5A ; VCE=4V
IC=15A ; VCE=4V
IC=1A ; VCE=10V
Product Specification
TIP35/35A/35B/35C
MIN TYP. MAX UNIT
40
60
V
80
100
1.8
V
4.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
15
75
3
MHz
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese