TIP32 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP32
V_CEO(SUS)
Collector-emitter
sustaining voltage
TIP32A
TIP32B
I_C=-30mA; I_B=0
TIP32C
V_CEsat Collector-emitter saturation voltage I_C=-3A ;I_B=-0.375A
V_BE
Base-emitter on voltage
TIP32
I_CES
Collector
cut-off current
TIP32A
TIP32B
I_C=-3A ; V_CE=-4V
V_CE=-40V; V_EB=0
V_CE=-60V; V_EB=0
V_CE=-80V; V_EB=0
TIP32C
V_CE=-100V; V_EB=0
I_CEO
I_EBO
h_FE-1
h_FE-2
Collector
cut-off current
TIP32/32A V_CE=-30V; I_B=0
TIP32B/32C V_CE=-60V; I_B=0
Emitter cut-off current
V_EB=-5V; I_C=0
DC current gain
I_C=-1A ; V_CE=-4V
DC current gain
I_C=-3A ; V_CE=-4V
f_T
Transiton frequency
I_C=-0.5A ; V_CE=-10V
Product Specification
TIP32/32A/32B/32C
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-1.2
V
-1.8
V
-0.2
mA
-0.3
mA
-1.0
mA
25
10
50
3
MHz
2