TIP31 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W)

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP31
V_CEO(SUS)
Collector-emitter
sustaining voltage
TIP31A
TIP31B
I_C=30mA; I_B=0
TIP31C
V_CEsat Collector-emitter saturation voltage I_C=3A I_B=0.375A
V_BE
Base-emitter on voltage
I_C=3A ; V_CE=4V
TIP31
V_CE=40V; V_EB=0
I_CES
Collector
cut-off current
TIP31A
TIP31B
V_CE=60V; V_EB=0
V_CE=80V; V_EB=0
TIP31C
V_CE=100V; V_EB=0
I_CEO
Collector
cut-off current
TIP31/31A V_CE=30V; I_B=0
TIP31B/31C V_CE=60V; I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=4V
h_FE-2
DC current gain
I_C=3A ; V_CE=4V
f_T
Transiton frequency
I_C=0.5A ; V_CE=10V
Product Specification
TIP31/31A/31B/31C
MIN TYP. MAX UNIT
40
60
V
80
100
1.2
V
1.8
V
0.2
mA
0.3
mA
1.0
mA
25
10
50
3
MHz
2