TIP30 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
TIP30/30A/30B/30C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP30
V_CEO(SUS)
Collector-emitter
sustaining voltage
TIP30A
TIP30B
I_C=-30mA; I_B=0
TIP30C
V_CEsat Collector-emitter saturation voltage I_C=-1A ;I_B=-0.125A
V_BE
Base-emitter on voltage
I_C=-1A ; V_CE=-4V
TIP30
V_CE=-40V; V_EB=0
I_CES
Collector
cut-off current
TIP30A
TIP30B
V_CE=-60V; V_EB=0
V_CE=-80V; V_EB=0
TIP30C
V_CE=-100V; V_EB=0
I_CEO
Collector
cut-off current
TIP30/30A V_CE=-30V; I_B=0
TIP30B/30C V_CE=-60V; I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE-1
DC current gain
I_C=-0.2A ; V_CE=-4V
h_FE-2
DC current gain
I_C=-1A ; V_CE=-4V
f_T
Transiton frequency
I_C=-0.2A ; V_CE=-10V;f=1MHz
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-0.7
V
-1.3
V
-0.2 mA
-0.3 mA
-1.0 mA
40
15
75
3
MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
4.167
UNIT
/W
2