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| TIP2955 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTOR | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
TIP2955
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A
VBE
Base-emitter on voltage
IC=-4A ; VCE=-4V
ICEO
Collector cut-off current
VCE=-30V; IB=0
ICER
Collector cut-off current
VCE=-70Vdc;RBE=100Ohm
ICEV
Collector cut-off current
VCE=-100Vdc,VBE(off)=-1.5Vdc
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-4V
hFE-2
Is/b
fT
DC current gain
IC=-10A ; VCE=-4V
Second breakdown collector current VCE=-30Vdc,t=1.0s,
With base forward biased
Nonrepetitive
Transition frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-60
V
-1.1
V
-3.0
V
-1.5
V
-0.7 mA
-1.0 mA
-5.0 mA
-5.0 mA
20
70
5.0
3.0
A
2.5
MHz
2
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