 English |
|
|
|
|
|
|
|
| TIP141 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP141
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICBO
Collector Cutoff current
VCB= 80V, IE= 0
ICEO
Collector Cutoff current
VCE= 40V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC = 30 V, IC = 5.0 A,
IBB = 20 mA;
Duty Cycleâ¤20%
IB1 = IB2,
RC & RB Varied,
TJ = 25â
MIN TYP. MAX UNIT
80
V
2.0
V
3.0
V
3.5
V
3.0
V
1
mA
2
mA
2
mA
1000
500
0.15
μs
0.55
μs
2.5
μs
2.5
μs
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese