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| TIP131 Datasheet, PDF (2/2 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP131
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB=B 30mA
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V, IE= 0
ICEO
Collector Cutoff Current
VCE= 40V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 4A; VCE= 4V
MIN
MAX UNIT
80
V
2.0
V
3.0
V
2.5
V
0.2
mA
0.5
mA
5
mA
500
1000 15000
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