TIP110 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W)

Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS)
Collector-emitter
sustaining voltage
TIP110
TIP111
TIP112
I_C=30mA, I_B=0
V_CEsat Collector-emitter saturation voltage I_C=2A ,I_B=8mA
V_BE
Base-emitter on voltage
I_C=2A ; V_CE=4V
I_CBO
Collector
cut-off current
TIP110
TIP111
TIP112
V_CB=60V, I_E=0
V_CB=80V, I_E=0
V_CB=100V, I_E=0
I_CEO
Collector
cut-off current
TIP110
TIP111
TIP112
V_CE=30V, I_B=0
V_CE=40V, I_B=0
V_CE=50V, I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=4V
h_FE-2
DC current gain
I_C=2A ; V_CE=4V
C_ob
Output capacitance
I_E=0 ; V_CB=10V,f=0.1MHz
Product Specification
TIP110/111/112
MIN TYP. MAX UNIT
60
80
V
100
2.5
V
2.8
V
1
mA
1000
500
2
mA
2
mA
100
pF
2