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| TIP106 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
TIP106
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A ,IB= -80mA
VBE(on) Base-Emitter On Voltage
IC= -8A ; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -80V, IE=0
ICEO
Collector Cutoff Current
VCE= -40V, IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -3A; VCE= -4V
hFE-2
DC Current Gain
IC= -8A; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V, f= 0.1MHz
MIN
MAX UNIT
-80
V
-2.0
V
-2.5
V
-2.8
V
-50
μA
-50
μA
-2
mA
1000 20000
200
300
pF
isc Websiteï¼www.iscsemi.cn
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