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| TIP105 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS | |||
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP105
TIP106 IC=-30mA, IB=0
TIP107
VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA
VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA
VBE
Base-emitter on voltage
IC=-8A ; VCE=-4V
TIP105 VCB=-60V, IE=0
ICBO
Collector cut-off current TIP106 VCB=-80V, IE=0
TIP107 VCB=-100V, IE=0
TIP105 VCE=-30V, IB=0
ICEO
Collector cut-off current TIP106 VCE=-40V, IB=0
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
DC current gain
TIP107 VCE=-50V, IB=0
VEB=-5V; IC=0
IC=-3A ; VCE=-4V
IC=-8A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
Product Specification
TIP105/106/107
MIN TYP. MAX UNIT
-60
-80
V
-100
-2.0
V
-2.5
V
-2.8
V
-50
A
1000
200
-50
A
-2
mA
20000
300
pF
2
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