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| T06 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
T06
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
200
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 1A; VCE= 5V
80
fT
Current-GainâBandwidth Product IC= 0.5A; VCE= 10V; f= 1.0MHz
10
tf
Fall Time
IC= 5A; IB1= -IB2= 0.6A, L= 150μH
VCC= 40V
V
1.0 V
1.2 V
0.1 mA
0.1 mA
160
MHz
0.75 μs
isc Websiteï¼www.iscsemi.cn
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