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| S2055AF Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON DIFFUSED POWER TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
S2055AF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2.0A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A ;IB=2.0A
VCE=1500V; VBE=0
TC=125
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V;f=5MHz
Switching times inductive load
ts
Storage time
tf
Fall time
IC=4.5A ; hFE=2.5; VCC=140V
LC=0.9mH; LB=3 H
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
1
2
mA
300 mA
8
7
MHz
7
s
0.55
s
2
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