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| PMD1601K Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
PMD1601K
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 2.2kΩ
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 40mA
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 3V
ICER
Collector Cutoff current
VCE= 60V; RBE=2.2KΩ
IEBO
Emitter Cut-off current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 10A; VCE= 3V
fT
Current-GainâBandwidth Product
IC= 7A; VCE= 3V, f= 1kHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
MIN MAX UNIT
60
V
60
V
2.0
V
2.8
V
2.8
V
7.0
mA
3.0
mA
750 20000
4
MHz
400
pF
isc Websiteï¼www.iscsemi.cn
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