|
MURD550PF Datasheet, PDF (2/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier | |||
|
◁ |
Fast Recovery Rectifier
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
INCHANGE Semiconductor
MURD550PF
MAX
2.8
UNIT
â/W
ELECTRICAL CHARACTERISTICS(Ta=25â) (Pulse Test: Pulse Width=300μs,Duty Cycleâ¤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage
IF= 5A ;Tj=25â
IF= 5A ;Tj=150â
1.15
0.98
IR
Maximum Instantaneous Reverse Current
VR= VRWM
VR= VRWM;Tj=150â
5
400
trr
Maximum Reverse Recovery Time
IF =1A;
95
UNIT
V
μA
ns
isc websiteï¼www.iscsemi.com
2 isc & iscsemi is registered trademark
|