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MJL21193 Datasheet, PDF (2/2 Pages) Motorola, Inc – 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJL21193
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA; IB=B 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A ;IB=B -0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A ;IB=-3.2A
VBE(on) Base-Emitter On Voltage
IC=-8A ; VCE=-5V
ICEO
Collector Cutoff Current
VCE=-200V,IB=0
ICEX
Collector Cutoff Current
VCE= -250V; VBE(off)= -1.5V
IEBO
Emitter Cutoff Current
VEB=-5V; IC=0
hFE-1
DC Current Gain
IC=-8A; VCE=-5V
hFE-2
DC Current Gain
IC=-16A; VCE=-5V
COB
Collector Capacitance
IE= 0; f=1MHz ; VCB=-10V
fT
Current Gain-Bandwidth Product
IC=-1A ;VCE=-10V; ftest=1MHz
MIN TYP. MAX UNIT
-250
V
-1.4 V
-4
V
-2.2 V
-0.1 mA
-0.1 mA
-1 μA
25
75
8
500 pF
4
MHz
isc Website:www.iscsemi.cn
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