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| MJL1302A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJL1302A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
V(BR)EBO
Emitter-Base Voltage
IE = 100 uA, IC = 0
VCE(sat)
Collector-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 10A; IB=1A
VCB= 200V; IE= 0
IEBO
hFE-1
Emitter Cutoff Current
DC Current Gain
VEB= 5V; IC= 0
IC = 100 mA, VCE = 5 V
hFE-2
hFE-3
DC Current Gain
DC Current Gain
IC = 1 A, VCE = 5 V
IC = 3 A, VCE = 5 V
hFE-4
DC Current Gain
IC = 5 A, VCE = 5 V
hFE-5
DC Current Gain
IC = 7 A, VCE = 5 V
hFE-6
DC Current Gain
IC = 8 A, VCE = 5 V
hFE-7
DC Current Gain
IC = 15 A, VCE = 5 V
IS/b
Second Breakdown
Collector with Base Forward Biased
fT
CurrentâGain â Bandwidth Product
Cob
Output Capacitance
(1) Pulse Test: Pulse Width = 300 ïs, Duty Cycle ï³ï 2%.
VCE = 50 Vdc, t =1s
VCE=100Vdc,t=1s
IC=1Adc,VCE=5Vdc,
ftest=1 MHz
VCB=10Vdc, IE= 0,
ftest = 1 MHz
MIN TYP. MAX UNIT
200
V
7
V
3.0
V
50 μA
5
μA
60
175
60
175
60
175
60
175
60
175
45
12
4
1
30
A
MHz
600
pF
isc Websiteï¼www.iscsemi.com
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