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MJH16012 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJH16012
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 0.7A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.3A ;
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.3A ;TC=100℃
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A ;IB= 0.7A
VBE(sat)-2 Base-Emitter Saturation Voltage
VBE(sat)-3 Base-Emitter Saturation Voltage
IC=10A ;IB= 1.3A ;
IC=10A ;IB= 1.3A ;TC=100℃
ICBO
Collector Cutoff Current
VCB=850V,IE=0,
ICBO
Collector Cutoff Current
VCB=850V,IE=0,TC=100℃
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE1
DC Current Gain
IC=1A ; VCE= 5V
hFE2
DC Current Gain
IC=1 5A ; VCE= 5V
COB
Output Capacitance
IE= 0; f= 1kHz ; VCB= 10V
MIN TYP. MAX UNIT
450
V
2.5
V
3.0 V
3.0 V
1.5
V
1.5 V
1.5 V
0.25 mA
1.0 mA
1.0 mA
10
40
5
400
pF
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