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| MJH16008 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJH16008
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
450
V
VCE(sat)-1
VCE(sat)-2
VBE(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
IC= 3A; IB=B 0.3A
IC= 5A; IB=B 0.5A
IC= 5A; IB=B 0.5A,TC=100â
IC= 5A; IB=B 0.5A
IC= 5A; IB=B 0.5A,TC=100â
VCEV=850V;VBE(off)=1.5V
VCEV=850V;VBE(off)=1.5V;TC=100â
VCE= 850V; RBE= 50Ω,TC= 100â
2.5 V
3.0
3.0
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0 mA
hFE
DC Current Gain
IC= 8A ; VCE= 5V
7
COB
Output Capacitance
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IE= 0; VCB= 10V; ftest=1.0kHz
IC= 5A , VCC= 250V; RB2= 4Ω;
IB1= 0.5A; IB2= -1A;PW= 30μs;
Duty Cycleâ¤2.0%
350 pF
20 50 ns
100 250 ns
900 2200 ns
70 250 ns
isc Websiteï¼www.iscsemi.cn
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