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| MJH10012 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A
VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat-1 Base-emitter saturation voltage
IC=6A; IB=0.6A
VBEsat-2 Base-emitter saturation voltage
IC=10A; IB=2A
VBE
Base-emitter on voltage
IC=10A ; VCE=6V
ICBO
Collector cut-off current
VCB=600V; IE=0
ICEO
Collector cut-off current
VCE=400V; IB=0
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
DC current gain
VEB=6V; IC=0
IC=3A ; VCE=6V
IC=6A ; VCE=6V
hFE-3
DC current gain
IC=10A ; VCE=6V
VF
Diode forward voltage
IF=10A
ts
Storage time
tf
Fall time
IC=6.0A ; VCC=12V
IB1=IB2=0.3A
Product Specification
MJH10012
MIN TYP. MAX UNIT
400
V
1.5
V
2.0
V
2.5
V
2.5
V
3.0
V
2.8
V
1
mA
1
mA
40
mA
300
100
2000
20
3.5
V
15
s
15
s
2
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