 English |
|
|
|
|
|
|
|
| MJE8501 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE8501
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
800
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.33A
IC= 1A; IB= 0.33A,TC=100â
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICEV
Collector Cutoff Current
ICER
Collector Cutoff Current
IC= 1A; IB= 0.33A
IC= 1A; IB= 0.33A,TC=100â
VCEV=1400V;VBE(off)=1.5V
VCEV=1400V;VBE(off)=1.5V;TC=100â
VCE= 1400V; RBE= 50Ω,TC= 100â
V
2.0
3.0
V
5.0 V
1.5
1.5
V
0.25
5.0
mA
5.0 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
1.0 mA
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
7.5
COB
Output Capacitance
Switching times;Resistive Load
IE= 0; VCB= 10V; ftest=1.0kHz
50
250 pF
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 1A , VCC= 500V, VBE(off)= 5V
IB1= 0.33A; tp= 50μs
Duty Cycleâ¤2.0%
45 200 ns
200 2000 ns
1000 4000 ns
500 2000 ns
isc websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese