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| MJE52T Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE52T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 2A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 200V; IB=0
ICES
Collector Cutoff Current
VCE= 400V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 10V
hFE-2
DC Current Gain
IC= 5A ; VCE= 10V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest=0.1MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= 2.5A , IB1= -IB2= 0.5A
VBE(off)= 5V; VCC= 125V
MIN TYP. MAX UNIT
300
V
2.0
V
2.0
V
1.0 mA
1.0 mA
1.0 mA
30
5
150 pF
0.5
μs
2.0
μs
isc Websiteï¼www.iscsemi.cn
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