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| MJE18006 Datasheet, PDF (2/3 Pages) Motorola, Inc – POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE18006
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=0.1A; L=25mH
IC=1.5A ;IB=0.15A
TC=125
IC=3A ;IB=0.6A
TC=125
IC=1.5A; IB=0.15A
VBEsat-2 Base-emitter saturation voltage
IC=3A; IB=0.6A
ICES
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=1V
hFE-3
DC current gain
IC=1.5A ; VCE=1V
hFE-4
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
COB
Collector outoput capacitance
IE=0;VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle 10%,Pulse Width=20 s
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
MIN TYP. MAX UNIT
450
V
0.6
0.65
V
0.7
0.8
V
1.2
V
1.3
V
0.1
0.5
mA
0.1
0.1
mA
0.1
mA
14
34
6
11
10
14
MHz
75
pF
90
180
ns
1.7
2.5
s
0.2
0.3
s
1.2
2.5
s
2
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