MJD45H11 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD45H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
-80
V
VCE(sat) Collector-EmitterSaturation Voltage
IC= -8A ;IB= -0.4 A
-1.0 V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IC= -8A ;IB= -0.8 A
VCE=Rated VCEO; VBE= 0
-1.5 V
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0 μA
hFE-1
DC Current Gain
IC= -2A ; VCE= -1V
60
hFE-2
DC Current Gain
IC= -4A ; VCE= -1V
40
COB
Output Capacitance
VCB= -10V,f= 1.0MHz
130
pF
fT
Current-Gain—Bandwidth Product
IC=-0.5A;VCE=-10V;ftest=20MHz
40
MHz
Switching Times; Resistive Load
td+tr
Delay and Rise Time
ts
Storage Time
tf
Fall Time
IC= -5A;
IB1= IB2= -0.5A
135
ns
500
ns
100
ns
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