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| MJ410 Datasheet, PDF (2/2 Pages) Motorola, Inc – 5 AMPERE POWER TRANSISTOR NPN SILICON | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ410
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB=B 0.1A
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
ICBO
Collector Cutoff Current
VCB= 200V;VEB(off)=1.5V;TC=125â
0.8
V
1.2
V
0.25 mA
0.5 mA
IEBO
Emitter Cutoff current
VEB= 5V; IC= 0
5.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE=5V
30
90
hFE-2
DC Current Gain
IC= 2.5A; VCE=5V
10
fT
Current-GainâBandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz
2.5
MHz
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