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| MJ1001 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ1001
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 40mA
VBE(on) Base-Emitter On Voltage
ICER
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 3A, VCE= 3V
VCE= 80V; RBE=1kΩ
VCE= 80V; RBE=1kΩ; TC=150â
VCE= 40V; IB=B 0
2.0
V
4.0
V
2.5
V
1.0
5.0
mA
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0 mA
hFE-1
DC Current Gain
IC= 3A, VCE= 3V
1000
hFE-2
DC Current Gain
IC= 4A, VCE= 3V
750
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