KTA1700 Datasheet, PDF (2/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1700
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -100mA; VCE= -5V
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-100mA; VCE= -10V
MIN TYP. MAX UNIT
-160
V
-5
V
-1.5 V
-1.0 V
-1.0 μA
-1.0 μA
70
240
30
pF
100
MHz
 hFE Classifications
O
Y
70-140 120-240
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