KSH50 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH50
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)*
VBE(on)*
ICEO
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
IC=1A; IB= 200mA
IC= 1A; VCE=10V
VCE= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1*
hFE2*
DC Current Gain
DC Current Gain
IC= 0.3A; VCE= 10 V
IC= 1A; VCE= 10 V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.2A; VCE= 10V
MIN
TYP MAX UNIT
400
V
1.0
V
1.5
V
0.2
mA
1
mA
30
150
10
10
MHz
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