KSH32C Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH32C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage
VBE(on)*
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC=- 3A; IB= -375mA
IC= -3A; VCE=-4V
VCB=- 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
hFE1*
hFE2*
DC Current Gain
DC Current Gain
IC= -1A; VCE= -4V
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= -0.5A; VCE= -10V
MIN
TYP MAX UNIT
-100
V
-1.2
V
-1.8
V
-20
uA
-1.0
mA
25
10
50
3
MHz
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