KSH29C Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH29C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)
VBE(on)
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
IC= 1A; IB= 125mA
IC= 1A; VCE=4V
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= 0.2A; VCE= 4V
IC= 1A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V
MIN
TYP MAX UNIT
100
V
0.7
V
1.3
V
0.2
mA
1.0
mA
40
15
75
3
MHz
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