KSH2955 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH2955
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage
VCE(sat)-2* Collector-Emitter Saturation Voltage
VBE(on)*
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC=- 4A; IB= -400mA
IC=- 10A; IB= -3.3A
IC= -4A; VCE=-4V
VCB=- 70V; IE= 0
IEBO
Emitter Cutoff Current
VEB=- 5V; IC= 0
hFE1*
hFE2*
DC Current Gain
DC Current Gain
IC= -4A; VCE= -4V
IC= -10A; VCE= -4V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= -0.5A; VCE= -10V
MIN
TYP MAX UNIT
-60
V
-1.1
V
-8
V
-1.8
V
-2
mA
-0.5
mA
20
100
5
2
MHz
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