KSH210 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH210
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-25
V
VCE(sat)-1* Collector-Emitter Saturation Voltage
VCE(sat)-2* Collector-Emitter Saturation Voltage
VCE(sat)-3* Collector-Emitter Saturation Voltage
VBE(sat)* Base-Emitter Saturation Voltage
VBE(on)*
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC=- 0.5A; IB= -50mA
IC=- 2.0A; IB= -200mA
IC= -5A; IB= -1A
IC= -5A; IB= -1A
IC= -2A; VCE=-1V
VCB=- 40V; IE= 0
-0.3
V
-0.75
V
-1.8
V
-2.5
V
-1.6
V
-100
nA
IEBO
Emitter Cutoff Current
VEB=- 8V; IC= 0
-100
nA
hFE1*
hFE2*
hFE3*
DC Current Gain
DC Current Gain
DC Current Gain
IC= -0.5A; VCE= -1V
70
IC= -2A; VCE= -1V
45
180
IC= -5A; VCE= -2V
10
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -10V
65
MHz
Cob
Collector output capacitance
VCB=-10V ,IE=0,f=1MHz
120
pF
*:Pulse test PW≤300us,duty cycle≤2%
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