KSH127 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
KSH127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=-8A; IB= -80mA
VBE(on)* Base-Emitter On Voltage
IC= -4A; VCE= -4V
V(BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -4A; VCE= -4V
hFE-2*
DC Current Gain
IC= -8A; VCE= -4V
COB
Output Capacitance
*:Pulse test PW≤300us,duty cycle≤2%
IE= 0; VCB= -10V; f= 1.0MHz
MIN TYP. MAX UNIT
-2.0 V
-4.0 V
-4.5 V
-2.8 V
-100
V
-10 uA
-2 mA
1K
12K
100
300
pF
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