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| KSD5080 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5080
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 8A
IC= 6A , IB1= 1.2A ; IB2= -2.4A
RL= 33.3Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
40
200 mA
8
5
2.0
V
0.3 μs
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