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| KSD5068 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5068
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 1.2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
tf
Fall Time
IC= 6A ; VCE= 5V
IC= 6A , IB1= 1.2A ; IB2= -2.4A
RL= 33.3Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
1
mA
8
5
0.3 μs
isc Websiteï¼www.iscsemi.cn
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